Niobium Silicide (NbSi2) Sputtering Target Description
The Niobium Silicide (NbSi2) Sputtering Target is engineered
for superior performance in vacuum deposition processes. Manufactured with a
controlled density and a melting point of 1950℃, this target offers excellent
thermal stability and consistency. Its high purity (≥99%) ensures optimal film
quality and uniformity, making it a preferred choice for critical applications
in semiconductor manufacturing, display technology, and solar energy devices.
The product is available in discs or can be custom-made to meet specific
industrial requirements.
Niobium Silicide (NbSi2) Sputtering Target Applications
· Thin Film Deposition: Ideal for semiconductor devices,
integrated circuits, and microelectronic components.
· Display Manufacturing: Used in the deposition of conductive or protective
layers for flat panel displays.
· Solar Cells: Assists in creating high-quality, uniform thin films crucial for
photovoltaic applications.
· Advanced Coating Technologies: Suitable for applications requiring robust
coatings in high-temperature environments.
Niobium Silicide (NbSi2) Sputtering Target Packing
The Niobium Silicide Sputtering Target is packaged under
controlled, clean room conditions to ensure its integrity and quality.
Customized packaging options are available based on your requirements, ensuring
safe transportation and storage.
Frequently Asked Questions
Q: What is the recommended application for the Niobium
Silicide (NbSi2) Sputtering Target?
A: It is ideal for advanced thin film deposition processes used in semiconductor,
display, and solar cell manufacturing.
Q: What purity level does the NbSi₂ sputtering target offer?
A: The product offers a high purity level of ≥99%.
Q: Can the sputtering target be customized in shape and
size?
A: Yes, the target is available in discs or can be custom-made according to
specific client requirements.
Q: What are the melting point and density specifications of
this target?
A: The target has a melting point of 1950℃ with a density ranging from 5.53 to
5.7 g/cm³.
Q: Is this sputtering target suitable for high-temperature
applications?
A: Absolutely, its high melting point ensures excellent performance even in
high-temperature environments.
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