Nickel Antimonide Sputtering Target Description
The Nickel Antimonide Sputtering Target, NiSb is a
specialized material manufactured with a precise composition of NiSb. Designed
for high performance in sputtering deposition processes, this target provides
consistent results in thin film fabrication. With a melting point of 1102 °C
and a density of 8.56 g/cm³, it delivers excellent thermal stability and
mechanical integrity. Ideal for use in advanced industrial applications, its
customized shapes and high purity (≥99%) make it a reliable choice for critical
applications in semiconductor manufacturing, optical coatings, and other
surface engineering processes.
Nickel Antimonide Sputtering Target Applications
· Thin Film Deposition: Optimized for creating uniform thin
films in semiconductor and display technologies.
· Optical Coatings: Provides excellent performance in the fabrication of
reflective and anti-reflective coatings.
· Surface Engineering: Enhances surface properties for applications in wear
resistance and corrosion protection.
· Advanced Electronics: Ideal for manufacturing components requiring precise
material properties and high conductivity.
Nickel Antimonide Sputtering Target Packing
Our Nickel Antimonide Sputtering Targets are carefully
prepared and packaged under controlled conditions to maintain product
integrity. Each target is vacuum-sealed and securely packaged, with standard
weights available in custom sizes as per customer requirements.
Frequently Asked Questions
Q: What are the main industrial applications of the Nickel
Antimonide Sputtering Target?
A: It is primarily used in thin film deposition for semiconductors, optical
coatings, and surface engineering in advanced electronics.
Q: What is the composition of this sputtering target?
A: The target is composed of NiSb with a purity level of ≥99%.
Q: Can the shape of the target be customized?
A: Yes, apart from standard discs, custom-made shapes can be produced to meet
specific application requirements.
Q: How does the high melting point benefit the sputtering
process?
A: The melting point of 1102 °C provides excellent thermal stability, ensuring
consistent performance during high-temperature deposition processes.
Q: What type of bond is used in the production of this
sputtering target?
A: The target utilizes an Indium bond, which enhances its performance during
sputtering deposition.
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